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| (R) STPS30150C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj VF (max) FEATURES AND BENEFITS A1 K A2 2 x 15 A 150 V 175C 0.75 V K A2 K A1 A2 A1 HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT INSULATED PACKAGE: TO-220FPAB Insulating voltage: 2000V DC Capacitance: 45pF AVALANCHE CAPABILITY SPECIFIED TO-220FPAB STPS30150CFP D2PAK STPS30150CG A2 DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Parameter Repetitive peak reverse voltage K A1 A2 K A1 TO-247 STPS30150CW TO-220AB STPS30150CT Value 150 30 per diode per device 15 30 tp = 10 ms sinusoidal tp = 1s Tj = 25C 220 10500 - 65 to + 175 175 10000 Unit V A A Average forward current TO-220FPAB Tc = 120C 2 = 0.5 TO-220AB/D PAK Tc = 155C TO-247 Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage IFSM PARM Tstg Tj dV/dt *: A W C C V/s dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) 1/7 February 2004 - Ed: 7 STPS30150C THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter TO-220FPAB TO-220AB/D2PAK TO-247 Rth (c) TO-220FPAB TO-220AB/D PAK TO-247 When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 5 ms, < 2% ** tp = 380 s, < 2% 2 Value Per diode Total Per diode Total Per diode Total Coupling Coupling Coupling 4 3.3 1.6 0.85 1.5 0.8 2.6 0.1 0.1 Unit C/W Min. Typ. Max. 6.5 8 0.92 Unit A mA V VR = VRRM IF = 15 A IF = 15 A IF = 30 A IF = 30 A 0.8 0.69 0.75 1 0.86 To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.0073 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(AV)(W) 14 12 10 8 6 4 2 Fig. 2: Average forward current versus ambient temperature ( = 0.5, per diode). IF(AV)(A) 18 = 0.1 = 0.05 = 0.2 = 0.5 16 14 Rth(j-a)=Rth(j-c) TO-220AB / TO-247 / D2PAK =1 12 10 8 6 4 Rth(j-a)=15C/W TO-220FP Rth(j-a)=Rth(j-c) T T IF(AV)(A) 0 0 1 2 3 4 5 6 7 8 9 =tp/T tp 2 0 0 10 11 12 13 14 15 16 17 18 =tp/T 25 tp 50 Tamb(C) 75 100 125 150 175 2/7 STPS30150C Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220AB, TO-247, D2PAK). IM(A) 225 200 175 150 125 100 Tc=75C Tc=50C Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220FPAB). IM(A) 140 130 120 110 100 90 80 70 60 50 40 Tc=75C Tc=50C 75 50 25 0 1.E-03 1.E-02 1.E-01 1.E+00 Tc=125C IM t 30 20 10 0 IM t Tc=125C =0.5 =0.5 t(s) t(s) 1.E-02 1.E-01 1.E+00 1.E-03 Fig. 6-1: Relative variation of thermal impedance junction to case versus pulse duration (per diode) (TO-220AB, TO-247, D2PAK). Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Single pulse = 0.2 = 0.1 = 0.5 Fig. 6-2: Relative variation of thermal impedance junction to case versus pulse duration. (TO-220FPAB) Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 = 0.2 = 0.1 = 0.5 T 0.1 0.0 1.E-03 1.E-02 1.E-01 T 0.2 0.1 tp(s) =tp/T tp 1.E+00 Single pulse tp(s) 1.E-02 1.E-01 0.0 1.E-03 =tp/T 1.E+00 tp 1.E+01 3/7 STPS30150C Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(A) 1E+5 Tj=175C Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25C 1E+4 Tj=150C 1E+3 1E+2 Tj=125C 100 Tj=100C 1E+1 1E+0 1E-1 0 25 50 Tj=25C VR(V) 10 75 100 125 150 VR(V) 1 2 5 10 20 50 100 200 Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness: 35m) (TO-220FPAB). Rth(j-a)(C/W) 80 IFM(A) 100.0 Tj=125C (maximum values) 70 60 10.0 Tj=125C (typical values) Tj=25C (maximum values) 50 40 30 20 10 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0 5 10 15 S(Cu)(cm) 20 25 30 35 40 4/7 STPS30150C PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF. A E L2 C2 Millimeters Min. Max. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 1.40 1.75 3.20 8 4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 10.00 4.88 15.00 1.27 1.40 2.40 0 Inches Min. 0.173 0.098 0.001 0.027 0.045 0.017 0.048 0.352 0.393 0.192 0.590 0.050 0.055 0.094 0 Max. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.409 0.208 0.624 0.055 0.069 0.126 8 A A1 A2 D L L3 A1 B2 B G A2 C R B B2 C C2 D E G L L2 L3 M * V2 M R V2 * FLAT ZONE NO LESS THAN 2mm 0.40 typ. 0.016 typ. FOOT PRINT DIMENSIONS (in millimeters) 16.90 10.30 1.30 5.08 3.70 8.90 5/7 STPS30150C PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Millimeters Min. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 PACKAGE MECHANICAL DATA TO-220FPAB DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.6 0.173 0.181 2.5 2.7 0.098 0.106 2.5 2.75 0.098 0.108 0.45 0.70 0.018 0.027 0.75 1 0.030 0.039 1.15 1.70 0.045 0.067 1.15 1.70 0.045 0.067 4.95 5.20 0.195 0.205 2.4 2.7 0.094 0.106 10 10.4 0.393 0.409 16 Typ. 0.63 Typ. 28.6 30.6 1.126 1.205 9.8 10.6 0.386 0.417 2.9 3.6 0.114 0.142 15.9 16.4 0.626 0.646 9.00 9.30 0.354 0.366 3.00 3.20 0.118 0.126 A H B REF. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. Dia L6 L2 L3 L5 D F1 L4 F2 L7 F G1 G E 6/7 STPS30150C PACKAGE MECHANICAL DATA TO-247 DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F1 3.00 0.118 F2 2.00 0.078 F3 2.00 2.40 0.078 0.094 F4 3.00 3.40 0.118 0.133 G 10.90 0.429 H 15.45 15.75 0.608 0.620 L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216 M 2.00 3.00 0.078 0.118 V 5 5 V2 60 60 Dia. 3.55 3.65 0.139 0.143 V REF. Dia. V H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D Cooling method : C Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Ordering Type STPS30150CT STPS30150CFP STPS30150CW STPS30150CG STPS30150CG-TR Marking STPS30150CT STPS30150CFP STPS30150CW STPS30150CG STPS30150CG Package TO-220AB TO-220FPAB TO-247 D PAK D PAK 2 2 Weight 2g 1.9 g 4.4 g 1.48 g 1.48 g Base qty 50 50 30 50 1000 Delivery mode Tube Tube Tube Tube Tape & reel Epoxy meets UL94, V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2004 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain Sweden - Switzerland - United Kingdom - United States www.st.com 7/7 |
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